Multi‐level wireless transmission using resonant tunneling diodes in 300‐GHz band

THz resonant-tunneling diodes

Multi - Band Model of Resonant Tunneling Diodes With

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Simulation of Resonant Tunneling Diodes Using ATLAS

This article describes a model for Resonant Tunneling Diodes (RTDs) implemented within ATLAS framework. The model is based on a self-consistent solution of Poisson and Non-Equilibrium Green’s Function (NEGF) equations with an effective mass Hamiltonian. Simulation results are presented for generic GaAs and SiGe RTDs.

Variable-area resonant tunneling diodes using implanted in-plane gates

Variable-area resonant tunneling diodes have been fabricated using a process in which the lateral confinement is produced by an in-plane implanted gate. The basic operation of such devices is discussed, and the lateral confinement shown by both measurements and numerical modeling to be very nearly symmetrical about the resonant tunneling diode (RID) barriers. Fine structure has been observed ne...

Electron-photon interaction in resonant tunneling diodes

– We develop a model to describe the transmission coefficient and tunneling current in the presence of electron-photon coupling in a resonant diode. Our model takes into account multiphoton processes as well as the transitions between electronic states with different wave numbers. This is crucial to explain the experimental features observed in the tunneling current through a double barrier whi...